to-251-3l/to-252-2l plastic-encapsulate transistors 3DD13003 transistor ( npn ) features power switching applications maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current -continuous 1.5 a p c collector dissipation 1.25 w t j , t stg junction and storage temperature -55~+150 electrical chara cteristics (ta=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br) cbo ic= 1ma,i e =0 700 v collector-emitter breakdown voltage v (br) ceo ic= 10 ma,i b =0 400 v emitter-base breakdown voltage v (br) ebo i e = 1ma,i c =0 9 v collector cut-off current i cbo v cb = 700v,i e =0 1 m a collector cut-off current i ceo v ce = 400v, i b =0 0. 5 ma emitter cut-off current i ebo v eb = 9 v, i c =0 1 m a h fe 1 v ce = 5 v, i c = 0.5 a 8 40 dc current gain h fe 2 v ce = 5 v, i c = 1.5a 5 collector-emitter saturation voltage v ce (sat) i c =1a,i b = 250 ma 0.6 v base-emitter saturation voltage v be (sat) i c =1a, i b = 250ma 1.2 v base-emitter voltage v be i e = 2a 3 v transition frequency f t v ce =10v,ic=100ma f =1mhz 5 mhz fall time t f 0.5 s storage time t s i c =250ma 2 4 i c =1a,i b1 =-i b2 =0.2a v cc =100v s classification of h fe (1) rank range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 to-251-3l/to- 252-2l 1. . base 2. collector 3. emitter classification of t s rank a1 a2 b1 b2 range 2-2.5 ( s ) 2.5-3( s ) 3-3.5( s ) 3.5-4 ( s ) 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,nov,2013
0.1 1 10 100 1000 200 400 600 800 1000 1200 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1 10 100 1000 1 10 100 0 200 400 600 800 1000 0.1 1 10 100 1000 01234567 0.00 0.25 0.50 0.75 1.00 1 10 100 1000 10 100 1000 =4 i c v besat ?? base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (w) 3DD13003 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 5v 1500 collector current i c (ma) base-emmiter voltage v be (mv) i c ?? v be t a = 2 5 t a = 100 common emitter v ce =5v static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) 1500 1500 1500 =4 t a = 1 0 0 t a =2 5 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) 50ma 45ma 40ma 35ma 30ma 25ma 10ma 15ma 20ma i b =5ma 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification d,nov,2013
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